silicon planar power zener diodes for use in stabilizing and clipping circuits with high power rating. standard zener voltage tolerance is 10%. add cas e:do-41 terminals: solderable per mil-std-202, method 208 polarity: cathode band marking: type number approx. weight: 0.35 grams. forw ard voltage at i f =200ma ratings at 25 ambient temperature unless otherwise specified. z-current i z p v /v z unit value symbol suffix "a" for 5% tolerance. other zener voltage and tolerances are available upon request. power dissipation: 1.0 w w zener current (see table "characteristics") junction temperature t j 200 symbol v f unit max ty p min 1.2 v storage temperature range t s -55---+200 pow er dissipation @ t amb 50 p diss 1.0 1) maximum ratings and electrical characteristics k/w 100 r thja junction ambient i=9.5mm(3/8 ), t l =constant ma 1n4728-1n4764 zener diode s features m echani cal d ata http://www.luguang.cn mail:lge@luguang.cn dimensions in inches and (millimeters) do-41
nominal zener voltage 1) tes t current vz@i zt i zt z zt @i zt z zk @i zk (v) (ma) ( )( ) 1n4728 3.3 76 10 400 1n4729 3.6 69 10 400 1n4730 3.9 64 9 400 1n4731 4.3 58 9 400 1n4732 4.7 53 8 500 1n4733 5.1 49 7 550 1n4734 5.6 45 5 600 1n4735 6.2 41 2 700 1n4736 6.8 37 3.5 700 1n4737 7.5 34 4.0 700 1n4738 8.2 31 4.5 700 1n4739 9.1 28 5.0 700 1n4740 10 25 7 700 1n4741 11 23 8 700 1n4742 12 21 9 700 1n4743 13 19 10 700 1n4744 15 17 14 700 1n4745 16 15.5 16 700 1n4746 18 14 20 750 1n4747 20 12.5 22 750 1n4748 22 11.5 23 750 1n4749 24 10.5 25 750 1n4750 27 9.5 35 750 1N4751 30 8.5 40 1000 1n4752 33 7.5 45 1000 1n4753 36 7.0 50 1000 1n4754 39 6.5 60 1000 1n4755 43 6.0 70 1500 1n4756 47 5.5 80 1500 1n4757 51 5.0 95 1500 1n4758 56 4.5 110 2000 1n4759 62 4.0 125 2000 1n4760 68 3.7 150 2000 1n4761 75 3.3 175 2000 1n4762 82 3.0 200 3000 1n4763 91 2.8 250 3000 1n4764 100 2.5 350 3000 45 41 27.4 125 22.8 170 1)based on dc_measurement at theral equilibrium while maitaining the lead temperature (t l ) at 30 +1 ,9.5mm(3/8")f rom the diode body . 2)valid prov ided that electrodes at a distance of 10 mm f orm case kept at ambient temperature. *)additionnal measurement of v oltage gruup 9v 1 to 75 at 95% v zmin 35na at t j 25 0.5 1.0 1.0 1.0 1.0 0.5 0.5 i zk (ma) 1.0 100 515.2 5 5 57 0.25 5 13.7 250 50 0.25 5 12.2 285 61 0.25 5 9.9 344 69 0.25 5 304 11.4 83 59.1380 76 58.4414 29.7 115 95 19 32.7 110 35.8 0.25 5 0.25 5 0.25 5 5 25.1 135 150 225 16.7 205 20.6 18.2 730 660 970 4 890 2 3 1 810 1260 1190 1070 1 1 1 1380 1 1.0 1.0 1.0 100 50 10 10 10 10 10 10 10 10 38 34 30 10 605 190 1 550 500 454 27 25 23 22 121 110 100 91 234 133 217 193 178 462 146 electrical characteristics (ta=25 ) type max s ur ge current 8.3ms max imum regulator current 2) i zm @t amb =50 i r @t amb =25 1.0 0.25 0.25 0.25 0.25 0.25 0.25 0.25 10 252 max imum dy namic impedanc e i r ( a) @v r (ma) (ma) max imum r ev er s e leakage current 276 (v) 0.25 0.25 5 0.25 5 5 6 7 7.6 5 18 0.25 5 42.6 80 16 0.25 5 38.8 90 14 0.25 5 51.7 65 13 0.25 5 47.1 70 12 0.25 5 62.2 55 11 0.25 5 56.0 60 0.25 5 69.2 50 0.25 5 79.0 45 10 9 1n4728-1n4764 zener diode s
fi g. 1 -- breakdown characteri sti cs fi g. 2 -- admi ssi ble power di ssi pati on versus ambi ent temperature w 1.0 0.8 0.6 0.2 0.4 0 0 100 200 ?? p tot t amb ma 0 51 0 i z 20 15 30 v 25 v z 20 40 60 80 100 1 n 4728 1n 4731 1n 4732 1 n 4733 1 n 4735 1n 4739 1n 4741 1 n 4742 1 n 4744 1 n 4747 1n 4748 1n 4749 1n 4750 1n4728-1n4764 zener diode s ratings and charactieristic curves http://www.luguang.cn mail:lge@luguang.cn
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